Photoresponse of pulsed laser deposited ZnO:Cu thin films

被引：9

作者：

Saini, Mahesh ^{[1
,2
]}

Singh, Ranveer ^{[1
,2
]}

Mitra, Anirban ^{[3
]}

Som, Tapobrata ^{[1
,2
]}

机构：

[1] Inst Phys, SUNAG Lab, Sachivalaya Marg, Bhubaneswar 751005, Odisha, India

[2] Homi Bhabha Natl Inst, Training Sch Complex, Mumbai 400085, Maharashtra, India

[3] Indian Inst Technol Roorkee, Dept Phys, Roorkee 247667, Uttarakhand, India

来源：

SOLAR ENERGY | 2020年 / 207卷

关键词：

ZnO:Cu; Photoresponse; Photocurrent; Pulsed laser deposition; Heterojunction; CZO; UV-PHOTODETECTOR; VISIBLE-LIGHT; TEMPERATURE; PERFORMANCE; EFFICIENT; COPPER; XANES;

D O I：

10.1016/j.solener.2020.06.072

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu-doped ZnO (2 wt%) thin films are deposited on p-Si (100) substrates using pulsed laser deposition (PLD) technique at room temperature. X-ray diffraction study shows the amorphous nature of these films, whereas scanning electron microscopy and atomic force microscopy images show their granular nature. A diode-like rectifying behaviour is revealed by the current-voltage characteristics of ZnO:Cu/p-Si heterojunction under both dark and light illumination conditions. In addition, it is demonstrated that there is a large enhancement in the photocurrent along with high sensitivity and responsivity of the diode. This study will be useful for the fabrication of ZnO:Cu based photodetectors.

引用

页码：228 / 234

页数：7

共 59 条

[1] Structural transformations of TiO2 films with deposition temperature and electrical properties of nanostructure n-TiO2/p-Si heterojunction diode [J].