Hierarchically Ordered Nano-Heterostructured PZT Thin Films with Enhanced Ferroelectric Properties

被引:32
作者
Datta, Anuja [1 ,2 ]
Mukherjee, Devajyoti [1 ,2 ,3 ]
Witanachchi, Sarath [1 ,2 ,3 ]
Mukherjee, Pritish [1 ,2 ,3 ]
机构
[1] Univ S Florida, Florida Cluster Adv Smart Sensor Technol, Tampa, FL 33620 USA
[2] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
[3] Univ S Florida, Ctr Integrated Funct Mat, Tampa, FL 33620 USA
关键词
ferroelectric materials; pulsed laser deposition; hydrothermal; hierarchical nanostructures; polarization switching; structure-property relationships; LEAD-ZIRCONATE-TITANATE; GROWTH; NANOSTRUCTURES; NANOTUBES; DYNAMICS; PHONON; ARRAYS;
D O I
10.1002/adfm.201303290
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Realization of ferroelectric (FE) devices based on the polarization effects of Pb(Zr0.52Ti0.48)O-3 (PZT) has reinforced the investigation of this material in multiple dimensions and length scales. Multi-level hierarchical nanostructure engineering in PZT thin films offer dual advantages of variable length-scale and dimensionality. Here, the growth of hierarchically ordered PZT nano-heterostructures (Nhs) from PZT seed-layer deposited on SrTiO3:Nb (100) substrates, using a physical/chemical combined methodology involving pulsed laser deposition (PLD) and hydrothermal processes, is reported. Systematic SEM, TEM, and Raman spectroscopy studies reveal mixed hetero- and homo-epitaxial growth mechanism. In the final stage, 3D Nh units cross-link and form a dense network-like Nh PZT thin-film. FE polarizations are measured without using any polymer fill-layer which otherwise introduces huge dielectric losses and lowers the polarization values for a FE device. In benefit, well saturated and symmetric FE hysteresis loops are observed with high degree of squareness and a high remnant polarization (54 C cm(-2) at a coercive field of 237 kV cm(-1)). This work provides a pathway towards preparing hierarchical PZT Nhs offering coherent design of high-performance FE capacitors for data storage technologies in future.
引用
收藏
页码:2638 / 2647
页数:10
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