Ab initio electronic properties of dual phosphorus monolayers in silicon

被引：5

作者：

Drumm, Daniel W. ^{[1
,2
]}

Per, Manolo C. ^{[1
,3
]}

Budi, Akin ^{[2
]}

Hollenberg, Lloyd C. L. ^{[2
]}

Russo, Salvy P. ^{[1
]}

机构：

[1] RMIT Univ, Sch Appl Sci, Melbourne, Vic 3001, Australia

[2] Univ Melbourne, Sch Phys, Parkville, Vic 3010, Australia

[3] CSIRO, Virtual Nanosci Lab, Parkville, Vic 3052, Australia

来源：

NANOSCALE RESEARCH LETTERS | 2014年 / 9卷

基金：

澳大利亚研究理事会;

关键词：

Ab initio; Density functional theory; Bilayers; Phosphorus in silicon; DELTA-LAYERS; TRANSPORT;

D O I：

10.1186/1556-276X-9-443

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers' relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device components are calculated.

引用

页数：10

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