CMOS-MEMS technology with front-end surface etching of sacrificial SiO2 dedicated for acoustic devices

被引:0
作者
Esteves, J. [1 ]
Rufer, L. [1 ]
Basrour, S. [1 ]
Ekeom, D. [2 ]
机构
[1] UJF, TIMA Lab, CNRS, G INP, Grenoble, France
[2] Microson, St Etienne, France
来源
2013 5TH IEEE INTERNATIONAL WORKSHOP ON ADVANCES IN SENSORS AND INTERFACES (IWASI) | 2013年
关键词
CMOS-MEMS Technology; Acoustic MEMS; Front-end Surface Etching; CONDENSER MICROPHONE; MODEL; VOLTAGE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, we will present results showing a feasibility of a MEMS microphone, based on AMS 0.35 mu m CMOS standard process, with only one step of a sacrificial SiO2 maskless etching on the substrate front-side. The microphone design, modeling and simulated performance will be stud Fabrication of test structures obtained with a SiO2 shown as well as characterizations of these test structures.
引用
收藏
页码:154 / 159
页数:6
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