Temperature-dependent fatigue behaviors of ferroelectric ABO3-type and layered perovskite oxide thin films

被引：39

作者：

Yuan, GL

Liu, JM ^{[1
]}

Wang, YP

Wu, D

Zhang, ST

Shao, QY

Liu, ZG

机构：

[1] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China

[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

关键词：

D O I：

10.1063/1.1734685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature-dependent dielectric and ferroelectric fatigue behaviors of ABO(3)-type perovskite thin films Pb(Zr0.52Ti0.48)O-3 (PZT) and Pb0.75La0.25TiO3 (PLT) and layered Aurivillius thin films SrBi2Ta2O9 (SBT) and Bi3.25La0.75Ti3O12 (BLT) with Pt electrodes are studied. The improved fatigue resistance of PZT and PLT at a low temperature can be explained by the defect-induced suppression of domain switch/nucleation near the film/electrode interface, which requires a long-range diffusion of defects and charges. It is argued that the fatigue effect of SBT and BLT is attributed to the competition between domain-wall pinning and depinning. The perovskitelike slabs and/or (Bi2O2)(2+) layers act as barriers for long-range diffusion of defects and charges, resulting in localization of the defects and charges. Thus, the fatigued SBT and BLT can be easily rejuvenated by a high electric field over a wide temperature range. (C) 2004 American Institute of Physics.

引用

页码：3352 / 3354

页数：3

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