GaN-on-Si failure mechanisms and reliability improvements

被引：45

作者：

Singhal, S. ^{[1
]}

Roberts, J. C. ^{[1
]}

Rajagopal, P. ^{[1
]}

Li, T. ^{[1
]}

Hanson, A. W. ^{[1
]}

Therrien, R. ^{[1
]}

Johnson, J. W. ^{[1
]}

Kizilyalli, I. C. ^{[1
]}

Linthicum, K. J. ^{[1
]}

机构：

[1] Nitronex Corp, 628 Hutton St,Suite 106, Raleigh, NC 27606 USA

来源：

2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | 2006年

关键词：

AlGaN/GaN HFETs; GaN high electron mobility transistors (HEMTs); RF power transistors; reliability; failure analysis;

D O I：

10.1109/RELPHY.2006.251197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation of 36mm AlGaN/GaN HFETs-on-Si under DC stress conditions has been studied on a large number of nominally identical devices that were chosen randomly across a production process. A common and primary degradation phenomenon was observed in the devices. A combination of electrical and physical analysis was used to identify a possible failure mechanism related to the Ni/Au Schottky gate diode that appears to explain the degradation of the FET. Based on the analysis, a gate anneal step was added into the fabrication process of AlGaN/GaN HFETs-on-Si. Nominal devices processed using a gate anneal showed (a) a modified gate metal-semiconductor interface (b) forward diode characteristics that are unchanged upon stress and (c) improvement in overall reliability relative to control devices.

引用

页码：95 / +

页数：2

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