Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

被引：235

作者：

Ahmadi, Elaheh ^{[1
,2
]}

Koksaldi, Onur S. ^{[2
]}

Kaun, Stephen W. ^{[1
]}

Oshima, Yuichi ^{[1
]}

Short, Dane B. ^{[1
]}

Mishra, Umesh K. ^{[2
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 04期

关键词：

D O I：

10.7567/APEX.10.041102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Ge doping of beta-Ga2O3(010) films was investigated using plasma-assisted molecular beam epitaxy as the growth method. The dependences of the amount of Ge incorporated on the substrate temperature, Ge-cell temperature, and growth regime were studied by secondary ion mass spectrometry. The electron concentration and mobility were investigated using Van der Pauw Hall patterns. Hall measurement confirmed that Ge acts as an n-dopant in beta-Ga2O3(010) films. These results were compared with similar films doped by Sn. The Hall data showed an improved electron mobility for the same electron concentration when Ge is used instead of Sn as the dopant. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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