Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition

被引：0

作者：

Yue YuanZheng ^{[1
]}

Hao Yue ^{[1
]}

Feng Qian ^{[1
]}

Zhang JinCheng ^{[1
]}

Ma XiaoHua ^{[1
]}

Ni JinYu ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES | 2009年 / 52卷 / 09期

基金：

中国国家自然科学基金;

关键词：

ALD; ultrathin Al2O3; AlGaN/GaN MOS-HEMT; FIELD-EFFECT TRANSISTORS; OXIDE; TEMPERATURE; COLLAPSE;

D O I：

10.1007/s11431-008-0231-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic-layer deposited (ALD) Al2O3 as the gate dielectric. Through further decreasing the thickness of the gate oxide to 3.5 nm and optimizing the device fabrication process, a device with maximum transconductance of 150 mS/mm was produced. The drain current of this 0.8 mu m gate-length MOS-HEMT could reach 800 mA/mm at +3.0 V gate bias. Compared to a conventional AlGaN/GaN HEMT of similar design, better interface property, lower leakage current, and smaller capacitance-voltage (C-V) hysteresis were obtained, and the superiority of this MOS-HEMT device structure with ALD Al2O3 gate dielectric was exhibited.

引用

页码：2762 / 2766

页数：5

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