EXAFS spectroscopic refinement of amorphous structures of evaporation-deposited Ge-Se films

被引:10
作者
Choi, Yong Gyu [1 ]
Shin, Sang Yeol [1 ]
Golovchak, Roman [2 ]
Lee, Suyoun [3 ]
Cheong, Byung-ki [3 ]
Jain, Himanshu [4 ]
机构
[1] Korea Aerosp Univ, Dept Mat Sci & Engn, Gyeonggi 412791, South Korea
[2] Austin Peay State Univ, Dept Phys & Astron, Clarksville, TN 37044 USA
[3] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
[4] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA
基金
新加坡国家研究基金会; 美国国家科学基金会;
关键词
Amorphous chalcogenide; Ge-Se film; EXAFS analysis; Amorphous structures; LOCAL-STRUCTURE; PHASE-CHANGE; GEXSE1-X; SCATTERING; GLASSES;
D O I
10.1016/j.jallcom.2014.10.036
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
EXAFS spectroscopic analysis is employed to elucidate the amorphous structure of evaporation-deposited GexSe100-x (x = 30, 49 or 69 in at%) films. The difficulty in the determination of local structure resulting from the similar backscattering amplitude of Ge and Se atoms has been overcome through comparative analysis of film specimens subjected to controlled heat treatment. Our results indicate that the 4(Ge):2(Se) structural model, which satisfies the (8 - N) rule, is valid for all of the compositions studied. However, the nearly equiatomic Ge49Se51 composition with 4(Ge):2(Se) amorphous structure crystallizes into orthorhombic GeSe crystalline phase with 3(Ge):3(Se) structural arrangements and quasi-crystalline Ge clusters. This significant difference in the local structure of amorphous and crystalline states is a distinctive signature of phase change compositions. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:189 / 193
页数:5
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