Vapor-Induced Improvements in Field Effect Mobility of Transparent a-IGZO TFTs

被引：7
作者：
Fujii, Mami N. [1 ]
Ishikawa, Yasuaki [1 ]
Horita, Masahiro [1 ]
Uraoka, Yukiharu [1 ]
机构：
[1] Nara Inst Sci & Technol, Nara 6300192, Japan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 09期
关键词：
THIN-FILMS; PRESSURE; HYDROGEN; TEMPERATURE; OXYGEN; WATER;
D O I：
10.1149/2.011409jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We found that high pressure assisted annealing with water vapor (HPV) is effective for improving the field effect mobility of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). The HPV-annealed TFTs exhibited better performance in field effect mobility compared with dry annealing under atmospheric pressure. Secondary ion mass spectroscopy (SIMS) analysis revealed that the hydrogen content increased through the whole a-IGZO film, despite the oxygen content increasing only within 20 nm depth from the a-IGZO surface. Consequently, hydrogen can affect front channel components and improve the field effect mobility of TFTs. (c) 2014 The Electrochemical Society. All rights reserved.
引用
收藏
页码：Q3050 / Q3053
页数：4
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