Silicon and silicon oxide core-shell nanoparticles: Structural and photoluminescence characteristics

被引:48
作者
Ray, Mallar [1 ]
Sarkar, Samata [1 ]
Bandyopadhyay, Nil Ratan [1 ]
Hossain, Syed Minhaz [2 ]
Pramanick, Ashit Kumar [3 ]
机构
[1] Bengal Engn & Sci Univ, Sch Mat Sci & Engn, Howrah 711103, W Bengal, India
[2] Bengal Engn & Sci Univ, Dept Phys, Howrah 711103, W Bengal, India
[3] Natl Met Lab, Div Mat Sci & Technol, Jamshedpur 831007, Jharkhand, India
关键词
ATOMIC-FORCE MICROSCOPY; POROUS SILICON; NANOCRYSTALLINE SILICON; SI NANOCRYSTALS; ELECTRONIC-STRUCTURE; QUANTUM DOTS; LUMINESCENCE; FILMS; ELECTROLUMINESCENCE; NANOWIRES;
D O I
10.1063/1.3100045
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the synthesis of spherical core-shell structures of silicon and silicon oxide by a novel route of forced external oxidation of ball milled silicon. Structural investigations reveal the formation of a crystalline silicon core surrounded by an amorphous oxide shell, with core and shell dimensions varying approximately between 4-10 and 55-170 nm, respectively. The observations suggest partial amorphization of crystalline silicon, invasive oxygen induced passivation of dangling bonds, and formation of different types of defects in the nanocrystalline silicon/silicon oxide core-shell structure, particularly at the interfaces. No detectable photoluminescence (PL) is obtained from the as-milled silicon, but the oxidized core-shell structures exhibit strong room temperature PL, detectable with unaided eye. The peak energy of the PL spectra blueshifts with an increase in excitation energy, with the peak positions varying from 2.24 to 2.48 eV under external excitation ranging from 2.41 to 3.5 eV. The observed PL characteristics are explained in terms of dominant electronic transitions between the localized defect states and quantum confinement induced widened band states. c 2009 American Institute of Physics. [DOI: 10.1063/1.3100045]
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页数:7
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共 40 条
[1]   Synthesis of nanocrystalline Si particles from a solid-state reaction during a ball-milling process [J].
Araujo-Andrade, C ;
Espinoza-Beltrán, FJ ;
Jiménez-Sandoval, S ;
González-Hernández, J .
SCRIPTA MATERIALIA, 2003, 49 (08) :773-778
[2]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[3]   USE OF THE VOIGT FUNCTION IN A SINGLE-LINE METHOD FOR THE ANALYSIS OF X-RAY-DIFFRACTION LINE BROADENING [J].
DEKEIJSER, TH ;
LANGFORD, JI ;
MITTEMEIJER, EJ ;
VOGELS, ABP .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1982, 15 (JUN) :308-314
[4]   Electrochemistry and electrogenerated chemiluminescence from silicon nanocrystal quantum dots [J].
Ding, ZF ;
Quinn, BM ;
Haram, SK ;
Pell, LE ;
Korgel, BA ;
Bard, AJ .
SCIENCE, 2002, 296 (5571) :1293-1297
[5]   Si/a-Si core/shell nanowires as nonvolatile crossbar switches [J].
Dong, Yajie ;
Yu, Guihua ;
McAlpine, Michael C. ;
Lu, Wei ;
Lieber, Charles M. .
NANO LETTERS, 2008, 8 (02) :386-391
[6]   Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition [J].
Edelberg, E ;
Bergh, S ;
Naone, R ;
Hall, M ;
Aydil, ES .
APPLIED PHYSICS LETTERS, 1996, 68 (10) :1415-1417
[7]   Photoluminescence and electroluminescence from porous silicon [J].
Fauchet, PM .
JOURNAL OF LUMINESCENCE, 1996, 70 :294-309
[8]   Formation and application of porous silicon [J].
Föll, H ;
Christophersen, M ;
Carstensen, J ;
Hasse, G .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2002, 39 (04) :93-141
[9]   CRYSTAL AMORPHOUS PHASE-TRANSITION INDUCED BY BALL-MILLING IN SILICON [J].
GAFFET, E ;
HARMELIN, M .
JOURNAL OF THE LESS-COMMON METALS, 1990, 157 (02) :201-222
[10]   Dynamic atomic force microscopy methods [J].
García, R ;
Pérez, R .
SURFACE SCIENCE REPORTS, 2002, 47 (6-8) :197-301