Sb7Te3/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

被引：6

作者：

Chen, Shiyu ^{[1
]}

Wu, Weihua ^{[1
]}

Zhai, Jiwei ^{[1
]}

Song, Sannian ^{[2
]}

Song, Zhitang ^{[2
]}

机构：

[1] Tongji Univ, Sch Mat Sci & Engn, Funct Mat Res Lab, Shanghai 201804, Peoples R China

[2] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2017年 / 218卷

关键词：

Sb7Te3/ZnSb; Thin film; Phase-change; Multilayer; HIGH-SPEED; ULTRAFAST;

D O I：

10.1016/j.mseb.2017.02.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phase-change memory is regard as one of the most promising candidates for the next-generation nonvolatile memory. In this work, we proposed a Sb7Te3/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb3Te7. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 degrees C. The threshold current and threshold voltage of a cell based on Sb7Te3/ZnSb are 6.9 mu A and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb7Te3/ZnSb films, benefiting from its high resistivity. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：59 / 63

页数：5

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