Printability of hard and soft defects in 193nm lithography

被引：2
|
作者：
Philipsen, V [1 ]
Jonckheere, R [1 ]
Kohlpoth, S [1 ]
Friedrich, C [1 ]
Torres, A [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
18TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS | 2002年 / 4764卷
关键词：
defect printability; 193nm lithography; soft defects; 100nm node; reticle quality;
D O I：
10.1117/12.479336
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic attempt has been undertaken to investigate the printability of mask defects for 100nm lithography using 193nm wavelength. The main purpose is the study of soft defects (particles), but hard defects have been taken as a reference. A reticle is designed with programmed soft and chrome defects in cells with different densities. As soft defects resist dots are used. Printability is first assessed by simulation, using ProLith v7.0. Wafers are printed using QUASAR(TM) illumination and evaluated by a CD SEM. We demonstrate that aerial image simulations and AIMS measurements can predict the qualitative trends in defect printability. A thorough quantitative analysis is presented.
引用
收藏
页码：95 / 111
页数：17
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