Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

被引：69

作者：

Lim, Yi Rang ^{[1
,2
]}

Han, Jin Kyu ^{[3
]}

Yoon, Yeoheung ^{[1
]}

Lee, Jae-Bok ^{[2
]}

Jeon, Cheolho ^{[4
]}

Choi, Min ^{[5
,6
]}

Chang, Hyunju ^{[5
]}

Park, Noejung ^{[7
]}

Kim, Jung Hwa ^{[8
]}

Lee, Zonghoon ^{[8
,9
]}

Song, Wooseok ^{[1
]}

Myung, Sung ^{[1
]}

Lee, Sun Sook ^{[1
]}

An, Ki-Seok ^{[1
]}

Ahn, Jong-Hyun ^{[2
]}

Lim, Jongsun ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, 141 Gajeong Ro, Daejeon 34114, South Korea

[2] Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 03722, South Korea

[3] Tech Univ Denmark, Dept Energy Convers & Storage, Frederiksborgvej 399, DK-4000 Roskilde, Denmark

[4] Korea Basic Sci Inst, Nanosurface Res Grp, Daejeon 302333, South Korea

[5] Korea Res Inst Chem Technol, Ctr Mol Modeling & Simulat, 141 Gajeong Ro, Daejeon 34114, South Korea

[6] Ulsan Natl Inst Sci & Technol, Dept Chem, 50 UNIST Gil, Ulsan 44919, South Korea

[7] Ulsan Natl Inst Sci & Technol, Dept Phys, 50 UNIST Gil, Ulsan 44919, South Korea

[8] Ulsan Natl Inst Sci & Technol, Sch Mat Sci & Engn, 50 UNIST Gil, Ulsan 44919, South Korea

[9] Ulsan Natl Inst Sci & Technol, Low Dimens Carbon Mat Ctr, 50 UNIST Gil, Ulsan 44919, South Korea

来源：

ADVANCED MATERIALS | 2019年 / 31卷 / 29期

关键词：

2D ternary alloys; hydrogen evolution reaction; photodetectors; transition metal dichalcogenides; VAPOR-PHASE GROWTH; WAFER-SCALE; LAYER MOS2; CONTROLLABLE GROWTH; BAND-GAP; MOS2(1-X)SE2X; PHOTODETECTORS; EVOLUTION; FILMS; HETEROSTRUCTURES;

D O I：

10.1002/adma.201901405

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1-x)Se2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62Se0.38, MoS1.37Se0.63, MoS1.15Se0.85, and MoS0.46Se1.54 alloys, as well as MoS2 and MoSe2. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2, are unambiguously achieved.

引用

页数：14

共 59 条

[1] Structural Phase Transformation in Strained Monolayer MoWSe2 Alloy [J].