Behavior of Al4C3 Particles During Flotation and Sedimentation in Aluminum Melts

被引:8
作者
Gokelma, Mertol [1 ,2 ]
Storm Aarnaes, Trygve [1 ]
Maier, Juergen [3 ]
Renkel, Maria F. [1 ]
Ekstrom, Kai Erik [1 ]
Friedrich, Bernd [3 ]
Tranell, Gabriella [1 ]
机构
[1] Norwegian Univ Sci & Technol, Dept Mat Sci & Engn, N-7491 Trondheim, Norway
[2] Izmir Inst Technol, Dept Mat Sci & Engn, TR-35430 Izmir, Turkey
[3] Rhein Westfal TH Aachen, IME Proc Met & Met Recycling, D-52056 Aachen, Germany
来源
METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE | 2021年 / 52卷 / 02期
关键词
CARBON; SOLUBILITY; STABILITY; AL;
D O I
10.1007/s11663-020-02049-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Al4C3 particles form during the primary production of aluminum via molten salt electrolysis due to the carbon solubility and direct contact between bath, metal, and carbon anodes. Additional Al4C3 may form during melt processing through direct contact between the melt and carbonaceous materials. As a result of their small size and similar density to aluminum, removal of aluminum carbide particles can be challenging. If not removed, carbides can produce inclusion defects or poor surface condition in aluminum products. The current work studies the removal and behavior of Al4C3 particles during flotation with different gas mixtures, as well as sedimentation. The interaction between carbide particles and Al2O3 films during the melt treatment processes was also studied and reported. Factsage thermochemical software was used to model the interactions at the interface of inclusions and bubbles covered by films. The highest degree of carbide removal was obtained after flotation with an H2O-containing argon gas mixture, where the carbide concentration dropped below the measured solubility limit of carbon at the corresponding temperature. Strong interaction between Al4C3 particles and Al2O3 films was observed during sedimentation which worked as an efficient removal method for the particles. Oxidation of carbides and formation of oxycarbides were suggested as the mechanisms promoting the attachment of carbides on oxide films.
引用
收藏
页码:743 / 754
页数:12
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