Optical properties of zincblende GaN/BN cylindrical nanowires

被引：9

作者：

Caetano, EWS

Freire, VN

Farias, GA

da Silva, EF

机构：

[1] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

[2] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil

来源：

APPLIED SURFACE SCIENCE | 2004年 / 234卷 / 1-4期

关键词：

gallium nitride; boron nitride; quantum wires; optical properties; excitons;

D O I：

10.1016/j.apsusc.2004.05.050

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We calculate the confined exciton energy of zincblende GaN/BN cylindrical nanowires using a two-parameter variational approach within the effective mass approximation. Feasibility of light emission in the 300-700 nm range is attained, depending both on the nanowire radius and the graded interface thickness. It is shown that in actual zincblende GaN/BN nanowire samples, the existence of non-abrupt interfaces can blue shift the exciton recombination energy up to similar to100 meV for non-abrupt interface thickness of just a few monolayers. (C) 2004 Published by Elsevier B.V.

引用

收藏

页码：50 / 53

页数：4

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