Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cells

被引：16
作者：
Bai, J. [1 ]
Athanasiou, M. [1 ]
Wang, T. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2016年 / 145卷
基金：
英国工程与自然科学研究理事会;
关键词：
GaN; Current spreading layer; Surface-texturing; Anti-reflection;
D O I：
10.1016/j.solmat.2015.10.026
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A systematic investigation of the utilization of indium-tin-oxide (ITO) as a current spreading layer (CSL) with and without a textured surface has been performed on InGaN-based solar cells, demonstrating a difference in the influence on the performance of the devices. It is found that employing an ITO CSL improves the conversion efficiency for devices with planar surfaces; whereas it reduces the efficiency for the surface textured devices. Consequently, best performance is achieved for the surface-textured solar cell without employing an ITO CSL, with an enhancement of 75% in the conversion efficiency compared to the planar cell without ITO. Our reflectance measurements show that the ITO CSL can effectively suppress surface reflection for the planar devices, while it becomes less effective for the surface-textured devices. Furthermore, a transmission measurement is carried out to estimate the absorption of the ITO CSL. The influence of the ITO CSL is discussed in terms of surface reflection and light loss due to the ITO shading effect as well as power loss associated with the absence of the ITO CSL. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：226 / 230
页数：5
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