Comparative analysis of MBE-grown GaN films on SiC, ZnO and LiGaO2 substrates

被引：0

作者：

Yun, F ^{[1
]}

Reshchikov, MA ^{[1
]}

He, L ^{[1
]}

King, T ^{[1
]}

Huang, D ^{[1
]}

Morkoç, H ^{[1
]}

Nause, J ^{[1
]}

Cantwell, G ^{[1
]}

Maruska, HP ^{[1
]}

Litton, CW ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

来源：

DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III | 2002年 / 719卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the growth of GaN films by RF-MBE on SiC, ZnO, and LiGaO2 substrates, without buffer layers, Structural and optical properties of the films were probed by AFM for surface morphology, XRD for crystalline structure, and PL for optical properties. The dependence of GaN layer quality on the substrates and their surface pre-treatment prior to growth was studied within a similar MBE growth parameter matrix for all samples.

引用

页码：41 / 46

页数：6

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