Relaxation, Structure, and Properties of Semicoherent Interfaces

被引：19

作者：

Shao, S. ^{[1
]}

Wang, J. ^{[2
]}

机构：

[1] Los Alamos Natl Lab, Mat Sci & Technol Div, MST 8, Los Alamos, NM 87545 USA

[2] Univ Nebraska, Mech & Mat Engn, Lincoln, NE 68588 USA

来源：

JOM | 2016年 / 68卷 / 01期

关键词：

NANOLAYERED COMPOSITES; DISLOCATION NUCLEATION; DEFORMATION MECHANISMS; SCREW DISLOCATION; THIN-FILMS; COHERENT; BEHAVIOR; DEFECTS; TRANSMISSION; MULTILAYERS;

D O I：

10.1007/s11837-015-1691-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Materials containing a high density of interfaces are promising candidates for future energy technologies because interfaces acting as sources, sinks, and barriers for defects can improve mechanical and irradiation properties of materials. A semicoherent interface widely occurring in various materials is composed of a network of misfit dislocations and coherent regions separated by misfit dislocations. In this article, we review the relaxation mechanisms, structure, and properties of (111) semicoherent interfaces in face-centered cubic structures.

引用

页码：242 / 252

页数：11

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