Quantifying the Spectral Diffusion of N-V Centers by Symmetry

被引:9
作者
McCullian, B. A. [1 ]
Cheung, H. F. H. [2 ]
Chen, H. Y. [2 ]
Fuchs, G. D. [1 ,3 ]
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[2] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA
[3] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
关键词
SOLID-STATE SPIN; NITROGEN-VACANCY CENTERS; ENTANGLEMENT; DEFECT;
D O I
10.1103/PhysRevApplied.18.064011
中图分类号
O59 [应用物理学];
学科分类号
摘要
The spectrally narrow, spin-dependent optical transitions of nitrogen-vacancy (N-V) center defects in diamond can be harnessed for quantum networking applications. Key to such networking schemes is the generation of indistinguishable photons. Two challenges limit scalability in such systems: defect-to-defect variations of the optical transition frequencies caused by local strain variation, and spectral diffusion of the optical frequencies on repeated measurement caused by photoexcitation of nearby charge traps. In this experimental study we undertake a group-theoretic approach to quantifying spectral diffusion and strain, decomposing each into components corresponding to Jahn-Teller symmetries of the N-V center. We inves-tigate correlations between the components of strain, spectral diffusion, and depth from the surface, finding that strain and spectral diffusion are each dominated by longitudinal perturbations. We also find a weak negative correlation between transverse static strain and total spectral diffusion, suggesting that transverse strain provides some degree of protection from spectral diffusion. Additionally, we find that spectral dif-fusion becomes more pronounced with increasing depth in the diamond bulk. Our symmetry-decomposed technique for quantifying spectral diffusion can be valuable for understanding how a given nanoscale charge trap environment influences spectral diffusion and for developing strategies of mitigation.
引用
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页数:14
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