Total ionizing dose response of commercial process for synthesis of linear bipolar integrated circuits

被引：0
作者：
Vukic, V.
Osmokrovic, P.
机构：
[1] Inst Elect Engn Nikola Tesla, Belgrade 11000, Serbia
[2] Univ Belgrade, Fac Elect Engn, Belgrade 11000, Serbia
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2006年 / 8卷 / 04期
关键词：
ionizing radiation; bipolar transistor; analog integrated circuit; radiation hardness;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper are presented results of commercial bipolar integrated circuits examinations in gamma and X radiation fields, for medium dose rate ionizing radiation. Voltage regulators "STMicroelectronics" L4940V5, made by 20V "High Density Super Signal/Power Process" (HDS2/P-2) were exposed to 1,25 MeV photons of gamma radiation and 150 keV bremsstrahlung photons. By the examination of maximum output current, serial transistor dropout voltage and line regulation characteristics was detected high radiation hardness of the mentioned process. Mechanisms of ionizing radiation influence on semiconductor and insulator are analyzed. The main reasons of high HDS2/P2 process radiation reliability were identified.
引用
收藏
页码：1538 / 1544
页数：7
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