Self-assembly of high-resolutions PS-b-PMMA block-copolymers: processes capabilities and integration on 300mm track

被引:7
作者
Chevalier, X. [1 ]
Nicolet, C. [1 ]
Tiron, R. [2 ]
Gharbi, A. [2 ]
Chamiot-Maitral, G. [2 ]
Jullian, K. [2 ]
Pimenta-Barros, P. [2 ]
Argoud, M. [2 ]
Peyre, J-L. [3 ]
Van Spaandonk, R. [3 ]
Fleury, G. [4 ]
Hadziioannou, G. [4 ]
Navarro, C. [1 ]
机构
[1] ARKEMA FRANCE, Route Natl 117,BP34, F-64170 Lacq, France
[2] CEA, LETI, MINATEC Campus,17 rue Martyrs, F-38054 Grenoble 9, France
[3] Tokyo Elect Europe Ltd, Tokyo, Japan
[4] Univ Bordeaux, CNRS, LCPO UMR 5629, F-33405 Talence, France
来源
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES VI | 2014年 / 9049卷
关键词
lithography; block-copolymer; self-assembly; PS-b-PMMA; contact hole shrink;
D O I
10.1117/12.2046313
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Careful control and reproducibility of BCP's synthesis are mandatory parameters to push-down PS-b-PMMA block-copolymer systems toward its lowest dimensions for microelectronic applications. The self-assembly process optimization of different high-resolution cylindrical PS-b-PMMA block-copolymers (i.e. L-0 period below 25 nm) is studied to highlight processes-variations as regard to more classical PS-b-PMMA systems while the characterizations of bulk materials provide deeper insights on the parameters addressing the self-assembly of such materials. The integration of a high-resolution BCP on 300 mm track is then studied to check the capabilities of such materials in terms of lithographic applications. CD uniformity measurements in contact hole shrink approach, as well as the transfer of the BCP mask into typical industrial under-layer stacks leading to aggressive features, show that these materials exhibit promising potentials for advanced lithographic nodes.
引用
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页数:10
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