Degradation Modeling of InGaP/GaAs/Ge Triple-Junction Solar Cells Irradiated by Protons

被引：2

作者：

Maximenko, S. I. ^{[1
]}

Lumb, M. P. ^{[2
]}

Messenger, S. R. ^{[3
]}

Hoheisel, R. ^{[2
]}

Affouda, C. ^{[1
]}

Scheiman, D. ^{[1
]}

Gonzalez, M. ^{[4
]}

Lorentzen, J. ^{[1
]}

Jenkins, P. P. ^{[1
]}

Walters, R. J. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

[2] George Washington Univ, Washington, DC 20037 USA

[3] Former US Naval Res Lab employee, Washington, DC USA

[4] Sotera Def Solut, Annapolis, MD 20701 USA

来源：

PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES III | 2014年 / 8981卷

关键词：

point defects; compensation centers; III-V-based solar cells; SEM; DIFFUSION LENGTH;

D O I：

10.1117/12.2040938

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Experimental results on triple-junction solar cells irradiated by 3 MeV proton irradiation to very high damage levels are presented. The minority carrier transport properties were obtained through quantum efficiency and EBIC measurements and an analytical drift-diffusion solver was used in understanding the results for different degradation levels where multiple damage mechanisms are evident.

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页数：8

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