Effect of Mo-doping in SnO2 thin film photoanodes for water oxidation

被引：22

作者：

Bozheyev, Farabi ^{[1
,2
,3
]}

Akinoglu, Eser Metin ^{[1
,4
]}

Wu, Lihua ^{[1
]}

Lou, Shuting ^{[1
]}

Giersig, Michael ^{[1
,5
]}

机构：

[1] South China Normal Univ, Int Acad Optoelect Zhaoqing, Liyuan St, Guangzhou 526238, Guangdong, Peoples R China

[2] Al Farabi Kazakh Natl Univ, Natl Nanolab, 71 Al Farabi Ave, Alma Ata 050000, Kazakhstan

[3] Nazarbayev Univ, 53 Kabanbay Batyr St, Astana 010000, Kazakhstan

[4] Univ Melbourne, Sch Chem, ARC Ctr Excellence Exciton Sci, Parkville, Vic 3010, Australia

[5] Polish Acad Sci, Inst Fundamental Technol Res, PL-02106 Warsaw, Poland

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2020年 / 45卷 / 58期

基金：

澳大利亚研究理事会;

关键词：

Mo:SnO2; Thin films; Photoanode; Photocurrent density; Sn/mo ratio; Band gap; PERFORMANCE; CONVERSION; SYSTEMS; CELLS;

D O I：

10.1016/j.ijhydene.2020.09.050

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

New semiconducting metal oxides of various compositions are of great interest for efficient solar water oxidation. In this report, Mo-doped SnO2 (Mo:SnO2) thin films deposited by reactive magnetron co-sputtering in the Ar and O-2 gas environment are studied. The Sn to Mo ratio in the films can be controlled by changing the O-2 partial pressure and the deposition power of the Sn and Mo targets. Increasing the Mo concentration in the film leads to the increase in the oxygen vacancy density, which limits the maximum achievable photocurrent density. The thin films exhibit a direct band gap of 2.7 eV, the maximum achievable photocurrent density of 0.6 mA cm(-2) at 0 VRHE and the onset potential of 0.14 VRHE. The incident photon to current transfer (IPCE) efficiency of 22% is shown at a 450 nm wavelength. The initial performance of the Mo:SnO2 thin films is evaluated for solar water oxidation. (C) 2020 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

引用

页码：33448 / 33456

页数：9

共 38 条

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