Classification of single-electron devices

被引:8
作者
Abramov, II [1 ]
Novik, EG [1 ]
机构
[1] Belorussian State Univ Informat & Radio Elect, Minsk 220027, BELARUS
关键词
D O I
10.1134/1.1187860
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A classification based on the principles identified in this paper is proposed for single-electron devices. A large number of currently known nanoelectronic devices of the type considered here can be described on the basis of this classification. This classification can be used to propose new single-electron devices. (C) 1999 American Institute of Physics. [S1063-7826(99)02211-5].
引用
收藏
页码:1254 / 1259
页数:6
相关论文
共 54 条
[1]  
ABRAMOV II, 1998, IZV BELORUS INZH AKA, P4
[2]   The history and future of semiconductor heterostructures [J].
Alferov, ZI .
SEMICONDUCTORS, 1998, 32 (01) :1-14
[3]   COULOMB-BLOCKADE IN A SILICON TUNNEL JUNCTION DEVICE [J].
ALI, D ;
AHMED, H .
APPLIED PHYSICS LETTERS, 1994, 64 (16) :2119-2120
[4]   A NEW CONCEPT FOR THE DESIGN AND REALIZATION OF METAL-BASED SINGLE-ELECTRON DEVICES - STEP-EDGE CUTOFF [J].
ALTMEYER, S ;
SPANGENBERG, B ;
KURZ, H .
APPLIED PHYSICS LETTERS, 1995, 67 (04) :569-571
[5]   THEORY OF SINGLE-ELECTRON CHARGING OF QUANTUM-WELLS AND DOTS [J].
AVERIN, DV ;
KOROTKOV, AN ;
LIKHAREV, KK .
PHYSICAL REVIEW B, 1991, 44 (12) :6199-6211
[6]  
AVERIN DV, 1986, ZH EKSP TEOR FIZ, V63, P427
[7]   SINGLE-ELECTRON TUNNELING EFFECTS IN GRANULAR METAL-FILMS [J].
BARSADEH, E ;
GOLDSTEIN, Y ;
ZHANG, C ;
DENG, H ;
ABELES, B ;
MILLO, O .
PHYSICAL REVIEW B, 1994, 50 (12) :8961-8964
[8]   Single-electron tunneling through a double quantum dot: The artificial molecule [J].
Blick, RH ;
Haug, RJ ;
Weis, J ;
Pfannkuche, D ;
vonKlitzing, K ;
Eberl, K .
PHYSICAL REVIEW B, 1996, 53 (12) :7899-7902
[9]   Measurement of phase and magnitude of the reflection coefficient of a quantum dot [J].
Buks, E ;
Schuster, R ;
Heiblum, M ;
Mahalu, D ;
Umansky, V ;
Shtrikman, H .
PHYSICAL REVIEW LETTERS, 1996, 77 (22) :4664-4667
[10]   Evolution of the Coulomb gap in tunnel-coupled quantum dots [J].
Crouch, CH ;
Livermore, C ;
Westervelt, RM ;
Campman, KL ;
Gossard, AC .
APPLIED PHYSICS LETTERS, 1997, 71 (06) :817-819