Numerical simulation of the flow field and concentration distribution in the bulk growth of silicon carbide crystals

被引：10
|
作者：
Lu, Jing [1 ]
Zhang, Zi-Bing [1 ]
Chen, Qi-Sheng [1 ]
机构：
[1] Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 292卷 / 02期
基金：
中国国家自然科学基金;
关键词：
computer simulation; growth model; mass transfer; growth from vapor; seed crystals; semiconducting silicon compounds;
D O I：
10.1016/j.jcrysgro.2006.04.067
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：519 / 522
页数：4
相关论文
共 50 条
  • [41] Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
    Selder, M
    Kadinski, L
    Durst, F
    Straubinger, T
    Hofmann, D
    Wellmann, P
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 31 - 34
  • [42] Numerical simulation of the hydrodynamics and mass transfer in the large scale, rapid growth of KDP crystals - 2: computation of the mass transfer
    Robey, HF
    JOURNAL OF CRYSTAL GROWTH, 2003, 259 (04) : 388 - 403
  • [43] Effective simulation of the effect of a transverse magnetic field (TMF) in Czochralski Silicon growth
    Collet, Yoan
    Magotte, Olivier
    Van den Bogaert, Nathalie
    Rolinsky, Roman
    Loix, Fabrice
    Jacot, Matthias
    Regnier, Vincent
    Marchal, Jean-Marie
    Dupret, Francois
    JOURNAL OF CRYSTAL GROWTH, 2012, 360 : 18 - 24
  • [44] Numerical Simulation of the Influence of Bottom Structures on the Flow Field Characteristic in Shaking Bioreactors
    Lu, Zhiming
    Li, Chengtuo
    Huang, Liuyi
    Zhong, Fengping
    Fei, Liangqi
    Zhang, Hongliang
    Pan, Yuhui
    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, 2020, 53 (12) : 739 - 746
  • [45] Numerical optimization of the interface shape at the VGF growth of semiconductor crystals in a traveling magnetic field
    Frank-Rotsch, Ch.
    Jockel, D.
    Ziem, M.
    Rudolph, P.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) : 1505 - 1510
  • [46] Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals
    Raming, G
    Muiznieks, A
    Mühlbauer, A
    JOURNAL OF CRYSTAL GROWTH, 2001, 230 (1-2) : 108 - 117
  • [47] Numerical Simulation of Flow Distribution in the Reactor Used for CFRPs Degradation under Supercritical Condition
    Cheng, Huanbo
    Liu, Weihao
    Huang, Haihong
    Liu, Zhifeng
    INTERNATIONAL JOURNAL OF CHEMICAL REACTOR ENGINEERING, 2019, 17 (11)
  • [48] Kinetic Monte Carlo simulation for the striation distribution of void defects in Czochralski silicon growth
    Lee, Sang Hun
    Oh, Hyun Jung
    Kim, Do Hyun
    MOLECULAR SIMULATION, 2010, 36 (09) : 663 - 669
  • [49] Determination of forced convection parameters by interferometric imaging of the concentration field during growth of KDP crystals
    Verma, Sunil
    Muralidhar, K.
    OPTICS AND LASERS IN ENGINEERING, 2011, 49 (07) : 915 - 923
  • [50] Numerical Simulation of flow field optimization in Flue Gas Desulfurization Tower with Wet Spray
    Wu, Q.
    Zhou, J.
    Han, M.
    Cui, L.
    INTERNATIONAL JOURNAL OF MULTIPHYSICS, 2020, 14 (03) : 215 - 225
12345