Tuning magnetic and electrical properties in Co doped ZnO films by defect engineering

被引：0

作者：

Wang Liguo ^{[1
]}

Zhang Peiling ^{[1
]}

机构：

[1] Henan Polytech Univ, Sch Elect Engn & Automat, Jiaozuo 454000, Peoples R China

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2014年 / 16卷 / 3-4期

关键词：

Magnetic property; Electrical property; Defect engineering; THIN-FILMS; SEMICONDUCTORS; FERROMAGNETISM; OXIDE; SPINTRONICS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High quality Zn0.95Co0.05O films with good reproducibility have been prepared by radio-frequency (RF) magnetron sputtering at various preparation conditions. These films were characterized by using x-ray diffraction, electrical transport, and magnetization measurements. The effect of the defects on the structural, magnetic, and electrical properties has been systematically investigated. It was found that the magnetization of Zn0.95Co0.05O films increases with increasing defects, whereas the resistivity decreases with increasing defects. The observed correlation between the magnetization, carrier concentration, and defects demonstrated the effect of the defects in controlling the magnetic and electrical properties in Zn0.95Co0.05O films. This also indicated that the magnetic and electrical properties of Zn0.95Co0.05O films can be tuned by defect engineering.

引用

页码：300 / 305

页数：6

共 26 条

[1] Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator [J].

Behan, A. J. ;

Mokhtari, A. ;

Blythe, H. J. ;

Score, D. ;

Xu, X-H. ;

Neal, J. R. ;

Fox, A. M. ;

Gehring, G. A. .

PHYSICAL REVIEW LETTERS, 2008, 100 (04)

[2] Donor impurity band exchange in dilute ferromagnetic oxides [J].

Coey, JMD ;

Venkatesan, M ;

Fitzgerald, CB .

NATURE MATERIALS, 2005, 4 (02) :173-179

[3] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[4] Evidence of the defect-induced ferromagnetism in Na and Co codoped ZnO [J].

Gu, Hao ;

Jiang, Yinzhu ;

Xu, Yongbing ;

Yan, Mi .

APPLIED PHYSICS LETTERS, 2011, 98 (01)

[5] Room-temperature ferromagnetism observed in undoped semiconducting and insulating oxide thin films [J].

Hong, NH ;

Sakai, J ;

Poirot, N ;

Brizé, V .

PHYSICAL REVIEW B, 2006, 73 (13)

[6] Role of defects in tuning ferromagnetism in diluted magnetic oxide thin films [J].

Hong, NH ;

Sakai, J ;

Huong, NT ;

Poirot, N ;

Ruyter, A .

PHYSICAL REVIEW B, 2005, 72 (04)

[7] Evidence of oxygen vacancy enhanced room-temperature ferromagnetism in Co-doped ZnO [J].

Hsu, H. S. ;

Huang, J. C. A. ;

Huang, Y. H. ;

Liao, Y. F. ;

Lin, M. Z. ;

Lee, C. H. ;

Lee, J. F. ;

Chen, S. F. ;

Lai, L. Y. ;

Liu, C. P. .

APPLIED PHYSICS LETTERS, 2006, 88 (24)

[8] Nature of the reversible paramagnetism to ferromagnetism state in cobalt-doped titanium dioxide [J].

Manivannan, A ;

Glaspell, G ;

Dutta, P ;

Seehra, MS .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)

[9] Making nonmagnetic semiconductors ferromagnetic [J].

Ohno, H .

SCIENCE, 1998, 281 (5379) :951-956

[10] Room-temperature ferromagnetism in carbon-doped ZnO [J].

Pan, H. ;

Yi, J. B. ;

Shen, L. ;

Wu, R. Q. ;

Yang, J. H. ;

Lin, J. Y. ;

Feng, Y. P. ;

Ding, J. ;

Van, L. H. ;

Yin, J. H. .

PHYSICAL REVIEW LETTERS, 2007, 99 (12)

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