A Theoretical Study of Fluorographene as Substrates for Mono-/Bi-layer Graphene

被引：1

作者：

Guo, Zhendong ^{[1
]}

Fan, Lei ^{[1
]}

Mei, Lingqi ^{[1
]}

Xu, Yang ^{[1
]}

Yu, Bin ^{[2
]}

机构：

[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China

[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

Fluorographene; substrate; gap engineering; screening effect;

D O I：

10.1063/1.4848318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using density functional theory, we discover fluorographene (CF) could help significantly preserve the superb electronic properties of graphene, depending on lattice stacking-order. Compared with h-BN, CF produces a much weaker screening effect for bilayer graphene when external electric field is applied, revealing a huge advantage in gap engineering. The studies suggest that fluorographene could be a promising route towards implementing highly functional substrate or gate dielectric materials for graphene-inspired device applications.

引用

页码：127 / +

页数：2

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