Solvothermal synthesis and electrochemical performance in super-capacitors of Co3O4/C flower-like nanostructures

被引:112
作者
Jiang, Jinhui [1 ]
Shi, Weidong [1 ]
Song, Shuyan [1 ]
Hao, Qingli [2 ]
Fan, Weiqiang [1 ]
Xia, Xifeng [2 ]
Zhang, Xian [1 ]
Wang, Qian [3 ]
Liu, Chunbo [1 ]
Yan, Dan [1 ]
机构
[1] Jiangsu Univ, Sch Chem & Chem Engn, Zhenjiang 212013, Peoples R China
[2] Nanjing Univ Sci & Technol, Sch Chem Engn, Nanjing 210094, Jiangsu, Peoples R China
[3] Jiangsu Univ, Sch Energy & Power Engn, Zhenjiang 212013, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
In situ carbon coating; Three dimensional flower-like nanostructures; Cobalt oxide; Supercapacitor; ONE-POT SYNTHESIS; ANODE MATERIAL; CONTROLLABLE SYNTHESIS; ELECTRODE MATERIAL; ENERGY-STORAGE; NI FOAM; CARBON; NANOPARTICLES; MICROSPHERES; CONVERSION;
D O I
10.1016/j.jpowsour.2013.10.046
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Novel three dimensional (3D) Co3O4/C flower-like nanostructures are synthesized via a facile solvothermal strategy. The samples are characterized by XRD, XPS, FT-IR, Raman, TG, SEM and HRTEM. The results show that the 3D flower-like nanostructures are consisted of numerous 2D nanosheets with the thickness of about 20 nm. The pseudocapacitive behaviors of Co3O4/C and bare Co3O4 flower-like nanostructures are investigated by cyclic voltammograms, galvanostatic charge-discharge and electrochemical impedance spectroscopy test. The results reveal that the Co3O4/C delivers a large specific capacitance of as high as 865 F g(-1) and 330 F g(-1) at 1 mV s(-1) and 0.5 A g(-1), according to CV and galvanostatic test, respectively; while the bare Co3O4 has a poor electrochemical performance, which exhibits specific capacitance of 131.7 F g(-1) and 46.1 F g(-1) at the same condition. The excellent electrochemical performance is attributed to the carbon present on the Co3O4 and the morphology, which possesses large surface area, unique flower-like nanostructures and low equivalent series resistance. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:1281 / 1289
页数:9
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