Electronic properties of vacancy-oxygen complex in Ge crystals

被引：66

作者：

Markevich, VP

Hawkins, ID

Peaker, AR

Litvinov, VV

Murin, LI

Dobaczewski, L

Lindström, JL

机构：

[1] Univ Manchester, Ctr Elect Mat, Manchester M60 1QD, Lancs, England

[2] Belarusian State Univ, Fac Phys, Minsk 220050, BELARUS

[3] Inst Solid State & Semicond Phys, Minsk 220072, BELARUS

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[5] Lund Univ, Dept Phys, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.1504871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is argued that the vacancy-oxygen (VO) complex (A center) in Ge has three charge states: double negative, single negative, and neutral. Corresponding energy levels are located at E-c-0.21 eV (VO--/-) and E-v+0.27 eV (VO-/0). An absorption line at 716 cm(-1) has been assigned to the asymmetrical stretching vibration mode of the doubly negatively charged VO complex. (C) 2002 American Institute of Physics.

引用

页码：1821 / 1823

页数：3

共 15 条

[1] LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS [J].