Optical spectroscopic investigation of m-plane GaN thin films

被引：0
作者：
Mohanta, Antaryami [1 ]
Tzeng, Yan-Zhi [2 ]
Lee, Meng-En [2 ]
Ling, Dah-Chin [3 ]
Wang, Ying-Chieh [1 ]
Lo, Ikai [1 ]
Jang, Der-Jun [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[2] Natl Kaohsiung Normal Univ, Dept Phys, Kaohsiung 80264, Taiwan
[3] Tamkang Univ, Dept Phys, New Taipei City 25137, Taiwan
来源：
OPTICAL MATERIALS EXPRESS | 2014年 / 4卷 / 09期
关键词：
TIME-RESOLVED PHOTOLUMINESCENCE; CHEMICAL-VAPOR-DEPOSITION; MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; GALLIUM NITRIDE; STACKING-FAULTS; ELECTRONIC-STRUCTURE; WIDTH DEPENDENCE; GAMMA-LIALO2; EMISSION;
D O I：
10.1364/OME.4.001920
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
M-plane GaN thin films grown on gamma-LiAlO2 substrate were investigated at different temperatures by photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. The origin of two distinct emissions, P-1 and P-2 observed in the PL spectra were established by analyzing their PL and TRPL properties at different temperatures. The P-1 emission is attributed to the excitons bound to the stacking faults (SFs). The P-2 shows an anomalous "S-shaped" emission shift with increasing temperature (T), and the associated mechanism is discussed. The radiative life time 'tau(r)' for P-2 emission exhibits the T (3/2) dependence at higher temperatures and deviates at lower temperatures whereas the radiative life time 'tau(r)' for P-1 emission does not show the T (3/2) dependence with temperature. The polarization-dependent PL study reveals that P-2 emission involves free holes in the transition at room temperature. (C) 2014 Optical Society of America
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页码：1920 / 1931
页数：12
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