Structural, magnetic and transport properties of La0.8Sr0.2MnO3/xNiO composites

被引:13
作者
Eshraghi, M. [1 ]
Salamati, H. [1 ]
Kameli, P. [1 ]
机构
[1] Isfahan Univ, Dept Phys, Esfahan 84154, Iran
关键词
D O I
10.1088/0953-8984/18/35/014
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The effect of NiO doping on the structure, magnetic and magnetotransport properties of La0.8Sr0.2MnO3(LSMO)/xNiO has been investigated. Two types of LSMO/xNiO composites were prepared by different processes using the solid-state reaction method. In the first type, the LSMO powders are mixed with small particle size NiO (SA(x) samples) and in the second type the LSMO powders are mixed with as-powder NiO (SBx samples). These studies show that some part of the Ni goes into the perovskite lattice, substituting Mn in LSMO, and the remainder segregates as a separate phase at the grain boundaries and grain surfaces. The presence of NiO at the grain boundaries increases the number of disordered states at the surface of the grains and therefore the low-temperature resistivity increases very quickly with the increase of NiO doping level. Results also show that the NiO doping has an effect on the low- field magnetoresistance (LFMR). The value of magnetoresistance (MR) increases for a low doping level of 0 <= x <= 3 and decreases at a high doping level of x >= 5. The spin- dependent tunnelling and scattering at the interfaces of the grain boundaries are responsible for the increasing of LFMR at x <= 3, while reduction of the LFMR at x >= 5 originates from substitution of Ni2+ for the Mn3+ ions, which introduces magnetic dilution into the samples. Also it can be found that, as T < 230 K, the MR value of the SB3 sample is larger than that of the SA(3) sample due to the presence of a larger amount of NiO at the grain boundaries and surfaces.
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页码:8281 / 8294
页数:14
相关论文
共 33 条
[1]   Magnetic homogeneity of colossal-magnetoresistance thin films determined by alternating current magnetic susceptibility [J].
Araujo-Moreira, FM ;
Rajeswari, M ;
Goyal, A ;
Ghosh, K ;
Smolyaninova, V ;
Venkatesan, T ;
Lobb, CJ ;
Greene, RL .
APPLIED PHYSICS LETTERS, 1998, 73 (23) :3456-3458
[2]   Low-temperature magnetotransport in nanometric half-metallic ferromagnetic perovskites [J].
Balcells, L ;
Martínez, B ;
Sandiumenge, F ;
Fontcuberta, J .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (13) :3013-3018
[3]   Enhanced field sensitivity close to percolation in magnetoresistive La2/3Sr1/3MnO3/CeO2 composites [J].
Balcells, L ;
Carrillo, AE ;
Martínez, B ;
Fontcuberta, J .
APPLIED PHYSICS LETTERS, 1999, 74 (26) :4014-4016
[4]   Magnetoresistance of chromium dioxide powder compacts [J].
Coey, JMD ;
Berkowitz, AE ;
Balcells, L ;
Putris, FF ;
Barry, A .
PHYSICAL REVIEW LETTERS, 1998, 80 (17) :3815-3818
[5]   Magnetic and electrical transport properties of La0.67Ca0.33MnO3 (LCMO):: xZnO composites [J].
Das, D ;
Srivastava, CM ;
Bahadur, D ;
Nigam, AK ;
Malik, SK .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (23) :4089-4102
[6]   Enhanced grain surface effect on the temperature-dependent behavior of spin-polarized tunneling magnetoresistance of nanometric manganites [J].
Dey, P ;
Nath, TK .
APPLIED PHYSICS LETTERS, 2005, 87 (16) :1-3
[7]   Defect-induced spin disorder and magnetoresistance in single-crystal and polycrystal rare-earth manganite thin films [J].
Evetts, JE ;
Blamire, MG ;
Mathur, ND ;
Isaac, SP ;
Teo, BS ;
Cohen, LF ;
Macmanus-Driscoll, JL .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1998, 356 (1742) :1593-1613
[8]   Coulomb blockade versus intergrain resistance in colossal magnetoresistive manganite granular films [J].
García-Hernández, M ;
Guinea, F ;
de Andrés, A ;
Martínez, JL ;
Prieto, C ;
Vázquez, L .
PHYSICAL REVIEW B, 2000, 61 (14) :9549-9552
[9]   Colossal magnetoresistance in Ce doped manganese oxides [J].
Gebhardt, JR ;
Roy, S ;
Ali, N .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5390-5392
[10]   Grain-boundary capacitance of La0.7Ca0.3MnO3 films -: art. no. 094422 [J].
Glaser, A ;
Ziese, M .
PHYSICAL REVIEW B, 2002, 66 (09) :944221-944225