Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content

被引：6

作者：

Zaima, Shigeaki ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Nakamura, Marika ^{[1
]}

Takeuchi, Wakana ^{[1
]}

Shimura, Yosuke ^{[1
]}

Taoka, Noriyuki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

关键词：

BAND-STRUCTURE; BUFFER LAYERS; GE; GAP; INP; SI;

D O I：

10.1149/05009.0897ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have investigated the epitaxial growth of Ge1-xSnx layers with a high Sn content over 10% and their optical properties. We examined the growth of Ge1-xSnx epitaxial layers with Sn contents over 10% on Ge and InP substrates. We have achieved the epitaxial growth of a Ge1-xSnx layer with a 27%-Sn content which is much higher than a thermoequilibrium solid solubility of Sn in Ge. We have also revealed the Sn content dependence of the direct energy bandgap for Ge1-xSnx layers with wide Sn contents ranging from 5% to 27%.

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收藏

页码：897 / 902

页数：6

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