Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices

被引：12

作者：

Bertocchi, Matteo ^{[1
]}

Luppi, Eleonora ^{[2
]}

Degoli, Elena ^{[3
]}

Veniard, Valerie ^{[4
,5
]}

Ossicini, Stefano ^{[1
,3
,6
]}

机构：

[1] Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42122 Reggio Emilia, Italy

[2] Univ Paris 06, Chim Theor Lab, F-75005 Paris, France

[3] Ist Nanosci CNR S3, I-41125 Modena, Italy

[4] CEA DSM, CNRS, Ecole Polytech, Lab Solides Irradies, F-91128 Palaiseau, France

[5] ETSF, F-91128 Palaiseau, France

[6] Univ Modena & Reggio Emilia, Ctr Interdipartimentale En & Tech, I-42122 Reggio Emilia, Italy

来源：

JOURNAL OF CHEMICAL PHYSICS | 2014年 / 140卷 / 21期

关键词：

OPTICAL-TRANSITIONS; GREENS-FUNCTION; ODD-PERIOD; SEMICONDUCTOR; EXCITATIONS; INTERFACES;

D O I：

10.1063/1.4880756

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems. (C) 2014 AIP Publishing LLC.

引用

页数：6

共 46 条

[11] Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors [J].

d'Avezac, Mayeul ;

Luo, Jun-Wei ;

Chanier, Thomas ;

Zunger, Alex .

PHYSICAL REVIEW LETTERS, 2012, 108 (02)

[12] Second-harmonic spectroscopy of interband excitations at the interfaces of strained Si(100)-Si0.85Ge0.15-SiO2 heterostructures [J].

Erley, G ;

Butz, R ;

Daum, W .

PHYSICAL REVIEW B, 1999, 59 (04) :2915-2926

[13] Sub-20 nm Si/Ge Superlattice Nanowires by Metal-Assisted Etching [J].

Geyer, Nadine ;

Huang, Zhipeng ;

Fuhrmann, Bodo ;

Grimm, Silko ;

Reiche, Manfred ;

Nguyen-Duc, Trung-Kien ;

de Boor, Johannes ;

Leipner, Hartmut S. ;

Werner, Peter ;

Goesele, Ulrich .

NANO LETTERS, 2009, 9 (09) :3106-3110

[14] LINEAR OPTICAL-PROPERTIES OF STRAINED (SI)N/(GE)N SUPERLATTICES ON (001) SI SUBSTRATES [J].

GHAHRAMANI, E ;

MOSS, DJ ;

SIPE, JE .

PHYSICAL REVIEW B, 1990, 41 (08) :5112-5125

[15] FULL-BAND-STRUCTURE CALCULATION OF 2ND-HARMONIC GENERATION IN ODD-PERIOD STRAINED (SI)N/(GE)N SUPERLATTICES [J].

GHAHRAMANI, E ;

MOSS, DJ ;

SIPE, JE .

PHYSICAL REVIEW B, 1991, 43 (11) :8990-9002

[16] 2ND-HARMONIC GENERATION IN ODD-PERIOD, STRAINED, (SI)N(GE)N/SI SUPERLATTICES AND AT SI/GE INTERFACES [J].

GHAHRAMANI, E ;

MOSS, DJ ;

SIPE, JE .

PHYSICAL REVIEW LETTERS, 1990, 64 (23) :2815-2818

[17] ENHANCEMENT OF ZONE-FOLDING EFFECTS IN THE 2ND-ORDER RESPONSE OF THE [(SI)5/(GE)5]/(SI0.4GE0.6)(001) SUPERLATTICE [J].

GHAHRAMANI, E ;

SIPE, JE .

APPLIED PHYSICS LETTERS, 1993, 62 (18) :2245-2247

[18] Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells [J].

Giorgioni, Anna ;

Pezzoli, Fabio ;

Gatti, Eleonora ;

Cecchi, Stefano ;

Inoki, Carlos Kazuo ;

Deneke, Christoph ;

Grilli, Emanuele ;

Isella, Giovanni ;

Guzzi, Mario .

APPLIED PHYSICS LETTERS, 2013, 102 (01)

[19] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J].

GNUTZMAN.U ;

CLAUSECK.K .

APPLIED PHYSICS, 1974, 3 (01) :9-14

[20] A brief introduction to the ABINIT software package [J].

Gonze, X ;

Rignanese, GM ;

Verstraete, M ;

Beuken, JM ;

Pouillon, Y ;

Caracas, R ;

Jollet, F ;

Torrent, M ;

Zerah, G ;

Mikami, M ;

Ghosez, P ;

Veithen, M ;

Raty, JY ;

Olevano, V ;

Bruneval, F ;

Reining, L ;

Godby, R ;

Onida, G ;

Hamann, DR ;

Allan, DC .

ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 2005, 220 (5-6) :558-562

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