Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices

被引：12

作者：

Bertocchi, Matteo ^{[1
]}

Luppi, Eleonora ^{[2
]}

Degoli, Elena ^{[3
]}

Veniard, Valerie ^{[4
,5
]}

Ossicini, Stefano ^{[1
,3
,6
]}

机构：

[1] Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42122 Reggio Emilia, Italy

[2] Univ Paris 06, Chim Theor Lab, F-75005 Paris, France

[3] Ist Nanosci CNR S3, I-41125 Modena, Italy

[4] CEA DSM, CNRS, Ecole Polytech, Lab Solides Irradies, F-91128 Palaiseau, France

[5] ETSF, F-91128 Palaiseau, France

[6] Univ Modena & Reggio Emilia, Ctr Interdipartimentale En & Tech, I-42122 Reggio Emilia, Italy

来源：

JOURNAL OF CHEMICAL PHYSICS | 2014年 / 140卷 / 21期

关键词：

OPTICAL-TRANSITIONS; GREENS-FUNCTION; ODD-PERIOD; SEMICONDUCTOR; EXCITATIONS; INTERFACES;

D O I：

10.1063/1.4880756

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems. (C) 2014 AIP Publishing LLC.

引用

页数：6

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