Glycine adsorption on silicon (001)

被引:5
作者
Ferraz, AC
Miotto, R
机构
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[2] Univ Brasilia, Inst Fis, BR-70919970 Brasilia, DF, Brazil
关键词
glycine adsorption; silicon (001); density functional theory;
D O I
10.1590/S0103-97332006000300020
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this work we employ the state of the art pseudopotential method, within a generalized gradient approximation to the density functional theory, to investigate the dissociative adsorption process of glycine on the silicon surface. Our total energy calculations indicate that the chemisorption of the molecule is as follow. The gas phase NH2-C2H2-OOH adsorbs molecularly to the electrophilic surface Si atom and then dissociates into NH2-C2H2-OO and H, bonded to the clectrophilic and nucleophilic surface silicon dimer atoms respectively, with an energy barrier corresponding to a thermal activation that is smaller than the usual growth temperature, indicating that glycine molecules will be observed in their dissociated states at room temperature. This picture is further support by our calculated vibrational modes for the considered adsorbed species.
引用
收藏
页码:309 / 312
页数:4
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