New developments in IBIC for the study of charge transport properties of radiation detector materials

被引:9
作者
Jaksic, M [1 ]
Pastuovic, Z [1 ]
Tadic, T [1 ]
机构
[1] Rudjer Boskovic Inst, Zagreb, Croatia
关键词
D O I
10.1016/S0168-583X(99)00321-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A study of charge transport properties in various radiation detector materials (Si, Si(Li), CdTe, GaAs, CVD and natural diamond) has become in recent years one of the major applications of the nuclear microprobe technique IBIC. Ln order to extend the capabilities of IBIC, further developments of the technique were considered. By changing the projectile type and energy, different sample layers in the range between one and several hundreds of microns can be imaged. A trigger signal from simultaneously detected secondary electrons or a transmitted ion enables time-resolved IBIC imaging to be carried out. Furthermore, simultaneous STIM imaging showing areal density distributions, can be essential for the interpretation of IBIC images. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:458 / 463
页数:6
相关论文
共 7 条
[1]  
Breese M.B.H., 1996, Materials Analysis Using a Nuclear Microprobe
[2]   A THEORY OF ION-BEAM-INDUCED CHARGE COLLECTION [J].
BREESE, MBH .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) :3789-3799
[3]   Electron emitter device of NEA diamond thin film [J].
Hata, A ;
Ogawa, K ;
Eimori, N ;
Deguchi, M ;
Kitabatake, M ;
Ito, T ;
Hiraki, A .
APPLIED SURFACE SCIENCE, 1997, 117 :592-596
[4]   A micro-IBIC comparison between natural and CVD diamond [J].
Manfredotti, C ;
Fizzotti, F ;
Mirri, K ;
Polesello, P ;
Vittone, E ;
Jaksic, M ;
Tadic, T ;
Bodganovic, I ;
Pochet, T .
DIAMOND AND RELATED MATERIALS, 1997, 6 (2-4) :320-324
[5]   IBIC and IBIL microscopy applied to advanced semiconductor materials [J].
Manfredotti, C ;
Fizzotti, F ;
Polesello, P ;
Vittone, E ;
Truccato, M ;
Lo Giudice, A ;
Jaksic, M ;
Rossi, P .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :1333-1339
[6]   Study of basic mechanisms of semiconductor devices using ion beam induced charge (IBIC) collection [J].
Nishijima, T ;
Sekiguchi, H ;
Hirao, T ;
Nashiyama, I ;
Nemoto, N ;
Matsuda, S ;
Shiono, N .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 130 (1-4) :528-533
[7]   ION-BEAM-INDUCED CHARGE-COLLECTION IMAGING OF CMOS ICS [J].
SEXTON, FW ;
HORN, KM ;
DOYLE, BL ;
LAIRD, JS ;
CHOLEWA, M ;
SAINT, A ;
LEGGE, GJF .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 79 (1-4) :436-442