Temperature-dependent measurement of Auger recombination in In0.40Ga0.60N/GaN red-emitting (λ=630 nm) quantum dots

被引：9

作者：

Frost, Thomas ^{[1
]}

Banerjee, Animesh ^{[1
]}

Jahangir, Shafat ^{[1
]}

Bhattacharya, Pallab ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Photon & Multiscale Nanomat, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 08期

基金：

美国国家科学基金会;

关键词：

GAN;

D O I：

10.1063/1.4867244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have derived the Auger recombination coefficients, as a function of temperature, for In0.4Ga0.6N/GaN self-organized quantum dots from large-signal modulation measurements made on lasers in which the quantum dots form the gain media. The value of C-a = 1.3 +/- 0.2 x 10(-31) cm(6) s(-1) at room temperature and the coefficient decreases with increase of temperature. (C) 2014 AIP Publishing LLC.

引用

页数：4

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