Structure and electric properties of CaCu3Ti4O12 ceramics prepared by rapid sintering

被引：16

作者：

Wang, J. Q. ^{[1
]}

Huang, X. ^{[1
]}

Zheng, X. H. ^{[1
]}

Tang, D. P. ^{[2
]}

机构：

[1] Fuzhou Univ, Coll Mat Sci & Engn, Inst Adv Ceram, 2 Xueyuan Rd, Fuzhou 350108, Peoples R China

[2] Fuzhou Univ, Coll Zijin Min, 2 Xueyuan Rd, Fuzhou 350108, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 02期

基金：

中国国家自然科学基金;

关键词：

GIANT DIELECTRIC RESPONSE; MICROSTRUCTURE; PERFORMANCE; CONSTANT; BEHAVIOR;

D O I：

10.1007/s10854-015-3895-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Structure and dielectric properties have been investigated for CaCu3Ti4O12 (CCTO) ceramics prepared by rapid sintering with relatively high sintering temperature and very short holding time. A very small amount of CuO is observed in XRD patterns of CCTO ceramics. Surface SEM of CCTO ceramics exhibits large grain and intergranular phase. Complex impedance spectra indicate that the internal barrier layer capacitor (IBLC) microstructure has been formed in the CCTO ceramics. And a giant dielectric permittivity of 8.5 x 10(3) at 1 kHz is achieved for the CCTO ceramics sintered at 1130 A degrees C for 30 min. The rapid sintering method may be effective in applying these ceramics, which are expected to facilitate IBLC microstructure.

引用

页码：1345 / 1349

页数：5

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