From Generation to Extraction: A Time-Resolved Investigation of Photophysical Processes in Non-fullerene Organic Solar Cells

被引:9
作者
Jasiunas, Rokas [1 ]
Zhang, Huotian [2 ]
Yuan, Jun [2 ,3 ]
Zhou, Xuehong [2 ]
Qian, Deping [2 ]
Zou, Yingping [3 ]
Devizis, Andrius [1 ]
Sulskus, Juozas [4 ]
Gao, Feng [2 ]
Gulbinas, Vidmantas [1 ,4 ]
机构
[1] Ctr Phys Sci & Technol, LT-10257 Vilnius, Lithuania
[2] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden
[3] Cent South Univ, Coll Chem & Chem Engn, Changsha 410083, Peoples R China
[4] Vilnius Univ, Fac Phys, Inst Chem Phys, LT-10222 Vilnius, Lithuania
关键词
CHARGE SEPARATION; POLYMER; DYNAMICS; RECOMBINATION; EFFICIENCY; INTERFACE;
D O I
10.1021/acs.jpcc.0c05263
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Non-fullerene organic solar cells (NFOSCs) demonstrate record efficiencies exceeding 16%. In comparison with cells with the fullerene-based acceptor, the NFOSCs benefit from a longer wavelength absorption, which leads to a small highest occupied molecular orbital (HOMO) level offset. Here, we use several advanced transient investigation techniques, covering timescale from sub-ps to mu s, to address all sequence of processes starting from photoexcitation of donors or acceptors to carrier extraction in several NFOSCs and cells with phenyl-C71-butyric acid methyl ester (PCBM). Though small offsets result in higher open-circuit voltage, we show that at the same time, it limits cell performance because of inefficient hole transfer from excited acceptors to donors and enhanced geminate recombination. We demonstrate that 100 meV HOMO level offset and proper acceptor molecule structures are sufficient for efficient hole transfer (>70%) and for reduction of the geminate recombination losses down to about 20%. Subsequent extraction of unbound charge carriers in all NFOSCs is slightly faster than in cells with PCBM, while non-geminate carrier recombination causing additional losses is slightly slower in the best performing NFOSCs than in cells with PCBM.
引用
收藏
页码:21283 / 21292
页数:10
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