NiSi2 ohmic contact to n-type 4H-SiC

被引：4
|
作者：
Nakamura, T [1 ]
Satoh, M
机构：
[1] Hosei Univ, Res Ctr Ion Beam Technol, Koganei, Tokyo 1848584, Japan
[2] Hosei Univ, Coll Engn, Koganei, Tokyo 1848584, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
NiSi2; ohmic contacts; specific contact resistance;
D O I：
10.4028/www.scientific.net/MSF.389-393.889
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the structural and electrical properties of NiSi2 contact to n-type 4H-SiC. NiSi2 films are prepared by annealing the Ni and Si films separately deposited on (0001)-oriented 4H-SiC substrates with carrier concentrations (n) of 2 X 10(18) and 2 X 10(19) cm(-3). The deposited films are annealed at 900 degreesC for 10 min in a flow Ar gas containing 5 vol.% H-2 gas. NiSi2 contacts restrict the reaction between the contact and 4H-SiC substrate and NiSi2 contacts form the abrupt interface between the contact and 4H-SiC substrate. The specific contact resistances of NiSi2 contact to n-type 4H-SiC with n = 2 X 10(18) and 2 X 10(19) cm(-3) are estimated to be 2.7 and 1.9 X 10(-6) Ohmcm(2), respectively.
引用
收藏
页码：889 / 892
页数：4
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