Nanocrystal Grain Growth and Device Architectures for High-Efficiency CdTe Ink-Based Photovoltaics

被引：62
作者：
Crisp, Ryan W. [1 ,2 ]
Panthani, Matthew G. [4 ]
Rance, William L. [1 ]
Duenow, Joel N. [1 ]
Parilla, Philip A. [1 ]
Callahan, Rebecca [1 ,3 ]
Dabney, Matthew S. [1 ]
Berry, Joseph J. [1 ]
Talapin, Dmitri V. [4 ]
Luther, Joseph M. [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA
[3] Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA
[4] Univ Chicago, Dept Chem, Chicago, IL 60637 USA
来源：
ACS NANO | 2014年 / 8卷 / 09期
关键词：
CdTe; photovoltaic; nanocrystal; grain growth; device architecture; sintering; solution-processed; SOLAR-CELLS; ELECTRICAL-PROPERTIES; PRECURSOR ROUTE; QUANTUM DOTS; LAYER; FILMS; OXIDE; PERFORMANCE; FABRICATION; SOLIDS;
D O I：
10.1021/nn502442g
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We study the use of cadmium telluride (CdTe) nanocrystal colloids as a solution-processable "ink" for large-grain (die absorber layers in solar cells. The resulting grain structure and solar cell performance depend on the initial nanocrystal size, shape, and crystal structure. We find that inks of predominantly wurtzite tetrapod-shaped nanocrystals with arms similar to 5.6 nm in diameter exhibit better device performance compared to inks composed of smaller tetrapods, irregular faceted nanocrystals, or spherical zincblende nanocrystals despite the fact that the final sintered film has a zincblende crystal structure. Five different working device architectures were investigated. The indium tin oxide (ITO)/CdTe/zinc oxide structure leads to our best performing device architecture (with efficiency >11%) compared to others including two structures with a cadmium sulfide (CdS) n-type layer typically used in high efficiency sublimation-grown (die solar cells. Moreover, devices without CdS have improved response at short wavelengths.
引用
收藏
页码：9063 / 9072
页数：10
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