Resistive switching in nanostructured thin films

被引：27

作者：

Silva, H. ^{[1
,2
]}

Gomes, H. L. ^{[1
]}

Pogorelov, Yu. G. ^{[2
]}

Stallinga, P. ^{[1
]}

de Leeuw, D. M. ^{[3
]}

Araujo, J. P. ^{[2
]}

Sousa, J. B. ^{[2
]}

Meskers, S. C. J. ^{[4
]}

Kakazei, G. ^{[2
]}

Cardoso, S. ^{[5
]}

Freitas, P. P. ^{[5
]}

机构：

[1] Univ Algarve, CEOT, P-8005139 Faro, Portugal

[2] Univ Porto, Dept Fis, Fac Ciencias, IFIMUP & Inst Nanosci & Nanotechnol, P-4169007 Oporto, Portugal

[3] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[4] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

[5] INESC MN & Inst Nanosci & Nanotechnol, P-1000029 Lisbon, Portugal

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期

关键词：

capacitor switching; ferromagnetic materials; magnetic thin films; nanostructured materials; MEMORY ELEMENTS; MULTILAYERS; BISTABILITY;

D O I：

10.1063/1.3134484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 10(4) under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.

引用

页数：3

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