Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes

被引：5

作者：

Brunkov, P. N. ^{[1
]}

Il'inskaya, N. D. ^{[1
]}

Karandashev, S. A. ^{[1
]}

Lavrov, A. A. ^{[1
]}

Matveev, B. A. ^{[1
]}

Remennyi, M. A. ^{[1
]}

Stus, N. M. ^{[1
]}

Usikova, A. A. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

INFRARED PHYSICS & TECHNOLOGY | 2014年 / 64卷

关键词：

Dark current; Photodiode structures; IR sensors;

D O I：

10.1016/j.infrared.2014.01.010

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Double heterostructure (DH) photodiodes (PDs) with InAs active layer and back-side illumination have been studied in the 100-300 K temperature range. Temperature dependence of a spectral response was standard for InAs based PDs while saturation current (or zero bias resistance) was characterized by a single value of the activation energy with domination of a diffusion current at most temperatures. As a result the simulated detectivity value was beyond the known numbers for homo- and heterojunction InAs PDs. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：62 / 65

页数：4

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