Raman scattering study of the long-wavelength longitudinal-optical-phonon-plasmon coupled modes in high-mobility InN layers

被引:43
作者
Cusco, Ramon [1 ]
Ibanez, Jordi [1 ]
Alarcon-Llado, Esther [1 ]
Artus, Luis [1 ]
Yamaguchi, Tomohiro [2 ]
Nanishi, Yasushi [2 ]
机构
[1] CSIC, Inst Jaume Almera, E-08028 Barcelona, Spain
[2] Ritsumeikan Univ, Fac Sci & Engn, Shiga 5258577, Japan
关键词
electron density; electro-optical effects; Hall effect; III-V semiconductors; indium compounds; phonon-plasmon interactions; Raman spectra; semiconductor thin films; spectral line breadth; wide band gap semiconductors; GAAS; SEMICONDUCTORS; SPECTROSCOPY; ACCUMULATION; EPITAXY; BAND; GAP;
D O I
10.1103/PhysRevB.79.155210
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the longitudinal-optical (LO)-phonon-plasmon coupled modes in high-mobility InN layers with free-electron densities ranging from 2.3x10(18) to 1.6x10(19) cm(-3) by means of Raman scattering. The observed L- coupled-mode peak displays the usual behavior for the low energy branch of the long-wavelength coupled modes, increasing in frequency and phononlike character as the electron density increases. The L- mode behavior can be satisfactorily explained by the standard dielectric model developed by Hon and Faust which takes into account wave-vector conserving scattering processes governed by the dipole-allowed deformation potential and electro-optic mechanisms. The free-electron density obtained from line-shape fits to the L- peak agrees well with Hall-effect measurements. The E-2(high) mode shifts to lower frequencies as the electron density increases, suggesting that strain relaxation has a bearing on the residual electron density in the InN layers. The L- frequency exhibits also a dependence on the excitation wave vector, which further indicates that wave-vector conserving scattering by LO-phonon-plasmon coupled modes takes place in these high-mobility samples. The presence of a relatively strong LO signal is attributed to surface-field-induced scattering in the accumulation region.
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页数:9
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