PROCESSING-STRUCTURE-PROPERTY CORRELATION IN DC SPUTTERED MOLYBDENUM THIN FILMS

被引：3

作者：

Khan, Majid ^{[1
,2
]}

Islam, Mohammad ^{[3
,4
]}

Akram, Aftab ^{[4
]}

Manzoor, Umair ^{[5
]}

机构：

[1] Univ Sci & Technol China, NSRL, Hefei 230029, Peoples R China

[2] Univ Sci & Technol China, Coll Nucl Sci & Technol, CAS Key Lab Soft Matter Chem, Hefei 230029, Peoples R China

[3] King Saud Univ, Coll Engn, Riyadh 11421, Saudi Arabia

[4] Natl Univ Sci & Technol, Sch Chem & Mat Engn, Islamabad 44000, Pakistan

[5] COMSATS Inst Informat Technol, Dept Phys, Islamabad, Pakistan

来源：

SURFACE REVIEW AND LETTERS | 2013年 / 20卷 / 06期

关键词：

Molybdenum; sputtering; PVD; resistivity; strain; films; BACK CONTACT;

D O I：

10.1142/S0218625X13500650

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Molybdenum thin films were sputter deposited under different conditions of DC power and chamber pressure. The structure and topography of the films were investigated using AFM, SEM and XRD techniques. Van der Pauw method and tape test were employed to determine electrical resistivity and interfacial strength to the substrate, respectively. All the films are of sub-micron thickness with maximum growth rate of 78 nm/min and crystallite size in the range of 4 to 21 nm. The films produced at high power and low pressure exhibit compressive residual strains, low electrical resistivity and poor adhesion to the glass substrate, whereas the converse is true for films produced at high pressure.

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页数：6

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