The lowered dielectric loss tangent and grain boundary effects in fluorine-doped calcium copper titanate ceramics

被引:41
作者
Huang, Xin [1 ]
Zhang, Huaiwu [1 ]
Lai, Yuanming [1 ]
Li, Jie [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2017年 / 123卷 / 05期
关键词
CACU3TI4O12 CCTO CERAMICS; BARRIER LAYER CAPACITOR; ELECTRICAL-PROPERTIES; CONSTANT; PERMITTIVITY; TEMPERATURE; DOPANT; CLUES;
D O I
10.1007/s00339-017-0947-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of F- concentration on the dielectric properties and electric modulus of CaCu3Ti4O12-xFx ceramics (0 <= x <= 0.8) were investigated in detail. Proper amount of F- substitution in CaCu3Ti4O12-xFx ceramics reduced the dielectric loss tangent. When x = 0.8, the dielectric loss tangent of CaCu3Ti4O12-xFx ceramic was about 0.05 (at 5 kHz), which was the lowest value and exhibited the highest grain boundary resistance (1.18 M Omega); meanwhile, the samples retained a relatively high dielectric constant above 7000 over a wide frequency range of 100 Hz to 1 MHz. The grain size was reduced as the F- doping concentration increased, which enhanced grain boundary resistance, and the decreased dielectric loss tangent was attributed to the increased grain boundary resistance. With the increase of F- concentration, the dielectric relaxation behaviors correlated with the grain boundary effects were significantly enhanced. The thermal-activated Schottky-type barrier was formed in the grain boundaries, and CaCu3Ti4O12-xFx ceramics had a nonlinear-Ohmic property.
引用
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页数:7
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