Quantum capacitance in monolayers of silicene and related buckled materials

被引:15
作者
Nawaz, S. [1 ,2 ,3 ]
Tahir, M. [4 ]
机构
[1] CNR IOM Lab TASC, I-34149 Trieste, Italy
[2] Abdus Salaam Int Ctr Theoret Phys, I-34014 Trieste, Italy
[3] PINSTECH, Phys Div, CDI, Islamabad, Pakistan
[4] Concordia Univ, Dept Phys, Montreal, PQ H3G 1M8, Canada
关键词
Silicene and related materials; Quantum capacitance; Spin Orbit Interactions; Puddle effects; GRAPHENE; ELECTRON;
D O I
10.1016/j.physe.2015.10.023
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicene and related buckled materials are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit coupling and the buckled structure. These materials have potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit coupling. We present a theoretical realization of quantum capacitance which has advantages over the scattering problems of traditional transport measurements. We derive and discuss quantum capacitance as a function of the Fermi energy and temperature taking into account electronhole puddles through a Gaussian broadening distribution. Our predicted results are very exciting and pave the way for future spintronic and valleytronic devices. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:169 / 172
页数:4
相关论文
共 33 条
[21]   Transport regimes in surface disordered graphene sheets [J].
Louis, E. ;
Verges, J. A. ;
Guinea, F. ;
Chiappe, G. .
PHYSICAL REVIEW B, 2007, 75 (08)
[22]   Observation of electron-hole puddles in graphene using a scanning single-electron transistor [J].
Martin, J. ;
Akerman, N. ;
Ulbricht, G. ;
Lohmann, T. ;
Smet, J. H. ;
Von Klitzing, K. ;
Yacoby, A. .
NATURE PHYSICS, 2008, 4 (02) :144-148
[23]  
Padova P. D., 2014, 2D MATER, V1
[24]   Ground State of Graphene in the Presence of Random Charged Impurities [J].
Rossi, Enrico ;
Das Sarma, S. .
PHYSICAL REVIEW LETTERS, 2008, 101 (16)
[25]   Solid argon as a possible substrate for quasi-freestanding silicene [J].
Sattar, S. ;
Hoffmann, R. ;
Schwingenschloegl, U. .
NEW JOURNAL OF PHYSICS, 2014, 16
[26]   Epitaxial growth of silicene on ultra-thin Ag(111) films [J].
Sone, Junki ;
Yamagami, Tsuyoshi ;
Aoki, Yuki ;
Nakatsuji, Kan ;
Hirayama, Hiroyuki .
NEW JOURNAL OF PHYSICS, 2014, 16
[27]   AC/DC spin and valley Hall effects in silicene and germanene [J].
Tabert, C. J. ;
Nicol, E. J. .
PHYSICAL REVIEW B, 2013, 87 (23)
[28]   Quantum spin/valley Hall effect and topological insulator phase transitions in silicene [J].
Tahir, M. ;
Manchon, A. ;
Sabeeh, K. ;
Schwingenschloegl, U. .
APPLIED PHYSICS LETTERS, 2013, 102 (16)
[29]  
Tao L, 2015, NAT NANOTECHNOL, V10, P227, DOI [10.1038/nnano.2014.325, 10.1038/NNANO.2014.325]
[30]   Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon [J].
Vogt, Patrick ;
De Padova, Paola ;
Quaresima, Claudio ;
Avila, Jose ;
Frantzeskakis, Emmanouil ;
Asensio, Maria Carmen ;
Resta, Andrea ;
Ealet, Benedicte ;
Le Lay, Guy .
PHYSICAL REVIEW LETTERS, 2012, 108 (15)