Quantum capacitance in monolayers of silicene and related buckled materials

被引：15

作者：

Nawaz, S. ^{[1
,2
,3
]}

Tahir, M. ^{[4
]}

机构：

[1] CNR IOM Lab TASC, I-34149 Trieste, Italy

[2] Abdus Salaam Int Ctr Theoret Phys, I-34014 Trieste, Italy

[3] PINSTECH, Phys Div, CDI, Islamabad, Pakistan

[4] Concordia Univ, Dept Phys, Montreal, PQ H3G 1M8, Canada

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2016年 / 76卷

关键词：

Silicene and related materials; Quantum capacitance; Spin Orbit Interactions; Puddle effects; GRAPHENE; ELECTRON;

D O I：

10.1016/j.physe.2015.10.023

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicene and related buckled materials are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit coupling and the buckled structure. These materials have potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit coupling. We present a theoretical realization of quantum capacitance which has advantages over the scattering problems of traditional transport measurements. We derive and discuss quantum capacitance as a function of the Fermi energy and temperature taking into account electronhole puddles through a Gaussian broadening distribution. Our predicted results are very exciting and pave the way for future spintronic and valleytronic devices. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：169 / 172

页数：4

共 33 条

[1] Insulating Behavior at the Neutrality Point in Single-Layer Graphene [J].

Amet, F. ;

Williams, J. R. ;

Watanabe, K. ;

Taniguchi, T. ;

Goldhaber-Gordon, D. .

PHYSICAL REVIEW LETTERS, 2013, 110 (21)

[2] DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS [J].

ARNOLD, E .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :705-707

[3] One-parameter scaling at the dirac point in graphene [J].

Bardarson, J. H. ;

Tworzydlo, J. ;

Brouwer, P. W. ;

Beenakker, C. W. J. .

PHYSICAL REVIEW LETTERS, 2007, 99 (10)

[4] Stability and electronic properties of two-dimensional silicene and germanene on graphene [J].

Cai, Yongmao ;

Chuu, Chih-Piao ;

Wei, C. M. ;

Chou, M. Y. .

PHYSICAL REVIEW B, 2013, 88 (24)

[5] Imaging charge density fluctuations in graphene using Coulomb blockade spectroscopy [J].

Deshpande, A. ;

Bao, W. ;

Zhao, Z. ;

Lau, C. N. ;

LeRoy, B. J. .

PHYSICAL REVIEW B, 2011, 83 (15)

[6] Spatially resolved spectroscopy of monolayer graphene on SiO2 [J].

Deshpande, A. ;

Bao, W. ;

Miao, F. ;

Lau, C. N. ;

LeRoy, B. J. .

PHYSICAL REVIEW B, 2009, 79 (20)

[7] Electrically tunable band gap in silicene [J].

Drummond, N. D. ;

Zolyomi, V. ;

Fal'ko, V. I. .

PHYSICAL REVIEW B, 2012, 85 (07)

[8] SIMPLE MODEL FOR DENSITY OF STATES AND MOBILITY OF AN ELECTRON IN A GAS OF HARD-CORE SCATTERERS [J].

EGGARTER, TP ;

COHEN, MH .

PHYSICAL REVIEW LETTERS, 1970, 25 (12) :807-+

[9] Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene [J].

Ezawa, Motohiko .

PHYSICAL REVIEW LETTERS, 2012, 109 (05)

[10] Carrier statistics and quantum capacitance of graphene sheets and ribbons [J].

Fang, Tian ;

Konar, Aniruddha ;

Xing, Huili ;

Jena, Debdeep .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

← 1 2 3 4 →