Preparation of Li-N-H codoped p-type ZnO films

被引：0
|
作者：
Lu Yang-Fan [1 ]
Ye Zhi-Zhen [1 ]
Zeng Yu-Jia [1 ]
Chen Lan-Lan [1 ]
Zhu Li-Ping [1 ]
Zhao Bing-Hui [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF INORGANIC MATERIALS | 2006年 / 21卷 / 06期
关键词：
p-type ZnO; magnetron sputtering; codoping; MOLECULAR-BEAM EPITAXY; THIN-FILMS; TEMPERATURE; SAPPHIRE; EMISSION;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Li-N-H codoped p-type ZnO films were fabricated on glass substrates by DC reactive magnetron sputtering. X-ray diffraction, Hall-effect measurement, photoluminescence spectra and transmittance spectra were used to characterize the films. The results show that the codoped films are highly c-oriented with a p-type conduction, resistivity of 25.2 Omega(.)cm, Hall mobility of 0.5cm(2)/((VS)-S-.), carrier density of 4.92 x 10(17) cm(-3), and transmittance of about 90%.
引用
收藏
页码：1511 / 1514
页数：4
相关论文
共 17 条
  • [1] Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers
    Chen, YF
    Tuan, NT
    Segawa, Y
    Ko, H
    Hong, S
    Yao, T
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (11) : 1469 - 1471
  • [2] Fumiyasu O., 2001, J APPL PHYS, V90, P824
  • [3] Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO
    Ip, K
    Overberg, ME
    Heo, YW
    Norton, DP
    Pearton, SJ
    Stutz, CE
    Luo, B
    Ren, F
    Look, DC
    Zavada, JM
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (03) : 385 - 387
  • [4] Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition
    Jin, BJ
    Im, S
    Lee, SY
    [J]. THIN SOLID FILMS, 2000, 366 (1-2) : 107 - 110
  • [5] Variation of light emitting properties of ZnO thin films depending on post-annealing temperature
    Kang, HS
    Kang, JS
    Pang, SS
    Shim, ES
    Lee, SY
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3): : 313 - 316
  • [6] Effect of fluorine doping on structural, electrical and optical properties of ZnO thin films
    Kumar, PMR
    Kartha, CS
    Vijayakumar, KP
    Singh, F
    Avasthi, DK
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 117 (03): : 307 - 312
  • [7] Possible p-type doping with group-I elements in ZnO -: art. no. 115210
    Lee, EC
    Chang, KJ
    [J]. PHYSICAL REVIEW B, 2004, 70 (11) : 115210 - 1
  • [8] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
    Look, DC
    Reynolds, DC
    Litton, CW
    Jones, RL
    Eason, DB
    Cantwell, G
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (10) : 1830 - 1832
  • [9] p-type conduction in N-Al co-doped ZnO thin films
    Lu, JG
    Ye, ZZ
    Zhuge, F
    Zeng, YJ
    Zhao, BH
    Zhu, LP
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3134 - 3135
  • [10] Park CH, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.073202
12